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 SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
CDBF0230L
Io = 200 mA VR = 30 Volt s Features
Low forward Voltage
(Lead-free Device)
Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical data
Case: SOD-323F (2512) Standard package , molded plastic.
0.051(1.30) 0.043(1.10)
0.035(0.90)
Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately).
0.027(0.70)
0.020(0.50) Typ.
0.012 (0.30) Typ.
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
Maximum Rating ( at T A = 25 C unless otherwise noted )
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward rectified current Forward current , surge peak Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method )
Conditions
Symbol Min Typ Max Unit
VRRM VR Io IFSM TSTG Tj -40 -40 35 30 200 1 +125 +125 V V mA A C C
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
Parameter
Forward voltage Reverse current I F = 200 mA VR = 10 V
Conditions
Symbol Min Typ Max Unit
VF IR 0.5 30 V uA
REV:A
QW-A1026
Page 1
SMD Schottky Barrier Diode
COMCHIP
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0230L)
Fig. 1 - Forward characteristics
1000 1m
75 C
Fig. 2 - Reverse characteristics
Forward current (mA )
100
Reverse current ( A )
100u
o
5
C
10u
25
C
12
5
10
o
7
C
o
5
2
C
o
2
C
1u
1
5
100n
25
C
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
10n 0 5 10 15 20 25 30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
Capacitance between terminals (pF)
100
Fig. 4 - Current derating curve
Average forward current ( % )
100
80
10
60
40
20
1
0 0
5 10 15 20 25 30
0
25
50
75
100
125
Reverse voltage (V)
Ambient temperature ( C )
REV:A
QW-A1026
Page 2


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